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triquint semiconductor texas: phone (972)994-8465 fax (972)994 8504 web: www.triquint.com advance product information april 28, 2003 1 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice -30 -20 -10 0 10 20 30 28 29 30 31 32 33 34 35 36 37 38 frequency (ghz) gain & r eturn loss (db ) ka band 2w power amplifier TGA4514-EPU key features ? typical frequency range: 31 - 35 ghz ? 33.5 dbm nominal psat @ vd = 7v ? 31.5 dbm nominal p1db ? imd3: 31dbc at pout/tone=22dbm ? 19 db nominal gain ? bias 6 - 7 v, 1150 ma ? 0.25 um 2mi phemt technology ? chip dimensions 4.0 x 3.2 x 0.1 mm (0.161 x 0.128 x 0.004) in primary applications ? point-to-point radio ? military radar systems ? ka band sat-com preliminary measured data bias conditions: vd = 6 v, id = 1150 ma gain irl orl 28 29 30 31 32 33 34 35 30 31 32 33 34 35 36 37 frequency (ghz) psat @ pin= 20dbm (dbm) bias conditions: vd = 6/7 v, id = 1150 ma vd = 7 v vd = 6 v
triquint semiconductor texas: phone (972)994-8465 fax (972)994 8504 web: www.triquint.com advance product information april 28, 2003 2 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice table i maximum ratings 1/ symbol parameter value notes vd drain voltage 8 v 2/ vg gate voltage range -5 to 0 v id drain current 2.5 a 2/ 3 / ig gate current 70 ma 3/ p in input continuous wave power 27 dbm p d power dissipation tbd 2/ 4 / t ch operating channel temperature 150 0 c5/ 6 / t m mounting temperature (30 seconds) 320 0 c t stg storage temperature -65 to 150 0 c 1/ these ratings represent the maximum operable values for this device. 2/ combinations of supply voltage, supply current, input power, and output power shall not exceed p d . 3/ total current for the entire mmic. 4/ when operated at this bias condition with a base plate temperature of tbd, the median life is reduced from tbd to tbd hrs. 5/ junction operating temperature will directly affect the device median time to failure (mttf). for maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. 6/ these ratings apply to each individual fet. TGA4514-EPU
triquint semiconductor texas: phone (972)994-8465 fax (972)994 8504 web: www.triquint.com advance product information april 28, 2003 3 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice parameter typical units frequency range 31 - 35 ghz drain voltage, vd 6 v drain current, id 1150 ma gate voltage, vg -0.5 v small signal gain, s21 19 db input return loss, s11 -7 db output return loss, s22 -10 db output power @ 1 db compression gain, p1db 31.5 dbm saturated power @ pin = 20 dbm, psat 32.5 dbm imd3, freq = 33 ghz, pout/tone = 22 dbm 31 dbc table iii electrical characteristics (ta = 25 0 c, nominal) TGA4514-EPU table ii dc probe tests (ta = 25 0 c, nominal) symbol parameter min. typ. max. units i dss,q1 saturated drain current 114 ma g m,q1 transconductance 150 ms v bvgs,q1-q6 breakdown voltage gate-source -16 v v bvgd,q1-q6 breakdown voltage gate-drain -16 v v p,q1-q6 pinch-off voltage -1 v q1- q4 are 400 um fets, q5 is 3200 um fet, q6 is 4000 um fet
triquint semiconductor texas: phone (972)994-8465 fax (972)994 8504 web: www.triquint.com advance product information april 28, 2003 4 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice 10 12 14 16 18 20 22 28 29 30 31 32 33 34 35 36 37 38 frequency (ghz) gain (db) TGA4514-EPU preliminary measured data bias conditions: vd = 6 v, id = 1150 ma, room temp. 28 29 30 31 32 33 34 35 30 31 32 33 34 35 36 37 frequency (ghz) psat @ pin = 20dbm (dbm) vd = 6 v vd = 7 v bias conditions: vd = 6/7 v, id = 1150 ma, room temp.
triquint semiconductor texas: phone (972)994-8465 fax (972)994 8504 web: www.triquint.com advance product information april 28, 2003 5 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice -35 -30 -25 -20 -15 -10 -5 0 28 29 30 31 32 33 34 35 36 37 38 frequency (ghz) input return loss (db) TGA4514-EPU preliminary measured data bias conditions: vd = 6 v, id = 1150 ma, room temp. -35 -30 -25 -20 -15 -10 -5 0 28 29 30 31 32 33 34 35 36 37 38 frequency (ghz) output return loss (db)
triquint semiconductor texas: phone (972)994-8465 fax (972)994 8504 web: www.triquint.com advance product information april 28, 2003 6 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice 25 26 27 28 29 30 31 32 33 34 35 31 32 33 34 35 36 37 frequency (ghz) pout (dbm) 25 26 27 28 29 30 31 32 33 34 35 30 31 32 33 34 35 36 frequency (ghz) pout (dbm) TGA4514-EPU preliminary measured data bias conditions: vd = 6 v, id = 1150 ma, room temp. psat @ pin=20dbm p1db bias conditions: vd = 7 v, id = 1150 ma, room temp. psat @ pin=20dbm p1db
triquint semiconductor texas: phone (972)994-8465 fax (972)994 8504 web: www.triquint.com advance product information april 28, 2003 7 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice 0 5 10 15 20 25 30 35 -5 -3 -1 1 3 5 7 9 11131517192123 pin (dbm) pout (dbm) & power gain (db) 200 400 600 800 1000 1200 1400 1600 id (ma) TGA4514-EPU preliminary measured data bias conditions: vd = 6 v, id = 1150 ma, freq = 33 ghz, room temp. gain pout id 0 10 20 30 40 50 60 6 8 10 12 14 16 18 20 22 24 26 28 30 pout per tone (dbm) imd3 (dbc) bias conditions: vd = 6 v, id = 1150 ma, freq = 33 ghz, room temp.
triquint semiconductor texas: phone (972)994-8465 fax (972)994 8504 web: www.triquint.com advance product information april 28, 2003 8 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice -5 0 5 10 15 20 25 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 frequency (ghz) gain (db) preliminary measured data bias conditions: vd = 6 v, id = 920 ma TGA4514-EPU +25 0 c -40 0 c +85 0 c
triquint semiconductor texas: phone (972)994-8465 fax (972)994 8504 web: www.triquint.com advance product information april 28, 2003 9 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice mechanical drawing TGA4514-EPU gaas mmic devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handling, assembly and test.
triquint semiconductor texas: phone (972)994-8465 fax (972)994 8504 web: www.triquint.com advance product information april 28, 2003 10 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice chip assembly diagram TGA4514-EPU gaas mmic devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handling, assembly and test. note: apply bias for vd on both sides. bias may be applied for vg from either side.
triquint semiconductor texas: phone (972)994-8465 fax (972)994 8504 web: www.triquint.com advance product information april 28, 2003 11 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice assembly process notes gaas mmic devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handling, assembly and test. tga4508-epu reflow process assembly notes: use ausn (80/20) solder with limited exposure to temperatures at or above 300 c (30 seconds max). an alloy station or conveyor furnace wi th reducing atmosphere should be used. no fluxes should be utilized. coefficient of thermal expansion matching is critical for long-term reliability. devices must be stored in a dry nitrogen atmosphere. component placement and adhesive attachment assembly notes: vacuum pencils and/or vacuum collets are the preferred method of pick up. air bridges must be avoided during placement. the force impact is critical during auto placement. organic attachment can be used in low-power applications. curing should be done in a convection oven; proper exhaust is a safety concern. microwave or radiant curing should not be used because of differential heating. coefficient of thermal expansion matching is critical. interconnect process assembly notes: thermosonic ball bonding is the preferred interconnect technique. force, time, and ultrasonics are critical parameters. aluminum wire should not be used. maximum stage temperature is 200 c.

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